Researchers at the Korea Advanced Institute of Science and Technology (KAIST) used three-dimensional imaging to map a nanoscale current pathway inside a capacitor for a resistive random-access memory (RRAM) device. They found that it connected to a tiny protrusion on the bottom electrode. The finding suggests that shaping the electrode could help control where these pathways form.
Researchers at the Korea Advanced Institute of Science and Technology (KAIST) used three-dimensional imaging to map a nanoscale current pathway inside a capacitor for a resistive random-access memory (RRAM) device.
They found that it connected to a tiny protrusion on the bottom electrode.The finding suggests that shaping the electrode could help control where these pathways form.
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